Abstract
A model of the radiation-induced segregation (RIS) in irradiated binary alloys, which takes into account the effect of the partial damage efficiencies is presented. Based on the model, the kinetics of RIS is investigated analytically and numerically. It is shown that no segregation exists when more intensive partial generation of point defects is compensated by corresponding greater diffusivity of the alloy component resulting in more intensive recombination on defect sinks. A simple criterion of the reversal of the RIS at the sample surface is obtained in terms of a critical temperature depending on the parameters related to the defect mobilities and partial damage efficiencies.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
