Abstract
This work details the harmful effect of parasitic resistances and capacitances on RF figures of merit (FoM) of ultra-thin body and thin buried oxide (UTBB) FD SOI n-MOSFETs. It is demonstrated that intrinsically, UTBB device can reach very high cut-off frequency (fT) provided the reduction of parasitic elements. In addition, based on device simulation, we demonstrate that with appropriate configuration, Asymmetric Double Gate (ADG) regime provides a slight improvement of RF figures-of-merit.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
