Abstract
The dependence of electroabsorption and electrorefraction in InGaAs/InP multiple-quantum- well (MQW) structures on the MQW parameter (as P mole fraction y, well thickness L<sub>z</sub>, residual impurity concentration N<sub>dj</sub> in i region, and interface quality) and on the applied electric field is investigated theoretically. The relationship between the performance of a MQW long-wavelength phase modulator and electro-refraction is also investigated. Our theoretical study shows that the In<sub>1-x</sub>Ga<sub>x</sub>As<sub>y</sub>P<sub>1-y</sub>/InP MQW structure with y equals 0.9, L<sub>z</sub> equals 100 angstrom is appropriate for a intensity modulator and the structure with y equals 0.87, L<sub>z</sub> equals 140 angstrom is suitable for a phase modulator. High interface quality and low i region residual impurity concentration are in favor of the fast and efficient MQW modulators.
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