Abstract
The role of UV ozone cleaning on the characteristics of Pt contacts on n-type (n∼1017cm−3) bulk single-crystal zinc oxide (ZnO) is reported. The contacts are Ohmic for samples that were not exposed to ozone prior to Pt deposition, but exhibit excellent rectifying behavior with ozone cleaning. The barrier height of these contacts obtained from current–voltage measurements was 0.70±0.04eV at 25°C with an ideality factor of 1.49 and a saturation current density of 6.17×10−6Acm−2. There is a significant decrease in surface carbon concentration after the ozone cleaning (29.5at.% down to 5.8at.%, as determined from Auger electron spectroscopy). The measured barrier height for Pt on ZnO is similar to the value reported for both Au and Ag rectifying contacts on this material. By sharp contrast, sputter-deposited W contacts are Ohmic, independent of the use of ozone cleaning and become rectifying after 700°C annealing to repair sputter-induced damage. The barrier height is ∼0.45–0.49eV, with the ozone cleaning producing values at the high end of this range.
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