Abstract
The effect of the oxygen partial pressure on the conductivity of (Ga, P) co-doped ZnO thin films (ZnO:Ga0.01P0.02, ZnO:Ga0.01P0.04) was investigated. The thin films were grown by using the pulsed laser deposition (PLD) method. As the oxygen partial pressure increased from 1mTorr to 200mTorr, the electron carrier concentration of the ZnO:Ga0.01P0.04 thin films decreased. Above 200mTorr, however, the electron carrier concentration increased and a transition from n-type to p-type conductivity was observed. On the other hand, in the case of the ZnO:Ga0.01P0.02 thin films, their electron carrier concentration continuously decreased as the oxygen partial pressure increased from 1 to 500mTorr, showing the typical n-type semi-conductive characteristics. The X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) analyses were used to characterize the n-type to p-type conductivity transitions with increasing oxygen partial pressure.
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