Abstract
Li-doped p-type Zn0.95Mg0.05O thin films have been achieved on glass substrates by pulsed laser deposition. X-ray diffraction shows that all the films exhibit good crystallinity with a highly c-axis preferential orientation. The results of the Hall measurements indicate that p-type conduction in Li-doped Zn0.95Mg0.05O films is strongly dependent on the oxygen pressure. Films deposited at 5 and 25 Pa show n-type conduction. However, at the oxygen pressure of 15 and 20 Pa, the films show definitive p-type conductivity. The maximal hole concentration was found to be 1.26 × 1018 cm−3 at a working pressure of 20 Pa with a resistivity of 17.82 Ω cm and Hall mobility of 0.285 cm2 V−1 s−1. Furthermore, all the p-type Zn0.95Mg0.05O films possess high average transmittance of ∼90% in the visible region and a band gap of 3.41 eV at room temperature.
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