Abstract
Silicon dioxide, silicon nitride and polycrystalline silicon are widely applied in silicon semiconductor manufacturing. The effect of oxygen plasma surface treatment on the properties of films is investigated. In this paper, the process margin of hexamethyldisilazane (HMDS) primer's temperature restricted by photoresist lifting, blister and peeling defect improved by oxygen plasma surface pretreatment on SiO2/Si3N4 substrate is investigated and the suppression of lateral interstitial diffusion in poly-Si by oxygen plasma treatment is studied. The effectiveness of oxygen plasma pretreatment on the improvement of the process stability and the device performance has been demonstrated.
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