Abstract
Silicon dioxide, silicon nitride and polycrystalline silicon are widely applied in silicon semiconductor manufacturing. The effect of oxygen plasma surface treatment on the properties of films is investigated. In this paper, the process margin of hexamethyldisilazane (HMDS) primer's temperature restricted by photoresist lifting, blister and peeling defect improved by oxygen plasma surface pretreatment on SiO2/Si3N4 substrate is investigated and the suppression of lateral interstitial diffusion in poly-Si by oxygen plasma treatment is studied. The effectiveness of oxygen plasma pretreatment on the improvement of the process stability and the device performance has been demonstrated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
