Abstract
Titanium-doped CdO thin films were deposited on quartz by pulsed laser deposition. The effect of oxygen partial pressure on optoelectrical properties of these films was studied. It is observed that surface roughness of the films depends on oxygen partial pressure. The root mean square values of surface roughness for the films grown under different oxygen pressure were found to vary from 0.55 to 2.95 nm. Highly conducting (4.41 × 10 4 S/cm), and transparent (∼78%) film with high mobility (120 cm 2 V −1 s −1) is observed for the film grown under oxygen pressure of 1.0 × 10 −3 mbar. The optical band gap is found varying between 2.45 and 2.67 eV for various oxygen pressure.
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