Abstract

Solid oxide fuel cell (SOFC) is a promising next-generation energy conversion device because of its high efficiency, cleanliness, and fuel flexibility. Recently, SOFC operating at low- to intermediate-temperature (LT to IT) range (< 600 ℃) has been studied to overcome the limitations of conventional SOFC, e.g., thermal stability, cost, and limited application. In lowered temperature range, however, charge transfer and transport rates slow down; therefore, SOFCs design with thin film stacks, namely thin film SOFC (TF-SOFC) fabricated on porous anode support have been usually adopted for sufficient power density even at this temperature regime.TF-SOFC usually uses Ni-YSZ (nickel-yttria-stabilized zirconia) cermet for anode functional layer (AFL) to accommodate the deposition of dense electrolyte layers on anode support with relatively large pores because of its reasonable cost, catalytic activity, and electrical conductivity. While various thin film techniques have been reported for AFL fabrication, e.g., pulsed layer deposition (PLD), RF sputtering, etc. Among such techniques, reactive sputtering method, which uses metal target in controlled gas environment (e.g., oxygen environment for oxide deposition), is a versatile method to deposit various types of thin films with fast speed (up to > 1um/hr), which is beneficial in manufacturabilily regarding the usual thickness range of AFL (a few microns). Furthermore, the reactive co-sputtering method can control anode properties such as composition ratio, deposition speed, and morphology in wide ranges.In this study, we fabricate reactive sputtered Ni-YSZ cermet anodes, as prototypes for AFLs of TF-SOFCs, by using a single metal target with various oxygen partial pressure conditions, and characterize their physical and chemical properties. Oxygen partial pressure significantly affects deposition speed, surface morphology, composition, electrochemical performance and its thermal durability at 450 ℃. The Ni-YSZ anode sputtered at the environment of O2/Ar partial pressure ratio of 0.1 sample shows the lowest activation resistance when applied to LT-SOFC’s anode. It is also shown that excessive O2/Ar partial pressure ratio (> 0.2) significantly reduces the deposition speed by approximately one order of magnitude compare to the lower ratio case.

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