Abstract
The effect of oxygen impurity on the production of room-temperature stable metastable defects has been studied in n-type silicon implanted with hydrogen ions at 88 K. Deep-level transient spectroscopy measurements have been performed for implanted epitaxial-(Epi) and Czochralski-grown (CZ) samples. It is found that three metastable defects (Ec–0.29, 0.41 and 0.55 eV) are observed in implanted CZ samples as already reported, while no production of metastable defects is revealed in Epi samples. This indicates that metastable defects are hydrogen-related defects involving oxygen.
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