Effect of Oxygen Impurities on the Nitridation of High‐Purity Silicon

Abstract

Journal of the American Ceramic SocietyVolume 56, Issue 3 p. 171-172 Effect of Oxygen Impurities on the Nitridation of High-Purity Silicon D. R. MESSIER, D. R. MESSIER The writers are with the Army Materials and Mechanics Research Center, Watertown, MA 02172.Search for more papers by this authorP. WONG, P. WONG The writers are with the Army Materials and Mechanics Research Center, Watertown, MA 02172.Search for more papers by this authorA. E. INGRAM, A. E. INGRAM The writers are with the Army Materials and Mechanics Research Center, Watertown, MA 02172.Search for more papers by this author D. R. MESSIER, D. R. MESSIER The writers are with the Army Materials and Mechanics Research Center, Watertown, MA 02172.Search for more papers by this authorP. WONG, P. WONG The writers are with the Army Materials and Mechanics Research Center, Watertown, MA 02172.Search for more papers by this authorA. E. INGRAM, A. E. INGRAM The writers are with the Army Materials and Mechanics Research Center, Watertown, MA 02172.Search for more papers by this author First published: March 1973 https://doi.org/10.1111/j.1151-2916.1973.tb15436.xCitations: 26 The writers are with the Army Materials and Mechanics Research Center, Watertown, MA 02172. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL No abstract is available for this article.Citing Literature Volume56, Issue3March 1973Pages 171-172 RelatedInformation