Effect of Oxygen Impurities and Synthesis Temperature on the Phase Composition of the Products of Self-Propagating High-Temperature Synthesis of Si3N4

Abstract

It has been shown that raising the oxygen impurity concentration in starting mixture components reduces the temperature of the α–β phase transition of silicon nitride. At oxygen contents above 2 wt %, the phase transition involves silicon oxynitride formation and decomposition. With decreasing oxygen impurity concentration in silicon nitride, the temperature of the α–β phase transition rises, approaching the dissociation temperature.