Effect of oxygen flow ratio on crystallization and structural characteristics of gallium oxide thin films

Abstract

Beta-gallium oxide (β-Ga 2 O 3 ) thin films were prepared on a MgO (100) substrate under different oxygen flow ratios via magnetron sputtering. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and UV–visible near-infrared (UV–vis–NIR) analyses were conducted to study how the oxygen flow ratio affected the crystalline quality and the surface topography of the films. Microstructure analysis revealed a clear out-of-plane orientation of β-Ga 2 O 3 (100) || MgO (100). The film deposited under an oxygen flow ratio of 1% presented the optimal single-crystalline structure, while excess oxygen was confirmed to negatively impact the crystallization characteristics of the films. SEM measurements indicated that the increase in the oxygen flow ratio reduced the grain size and RMS roughness. The average transmittance of the β-Ga 2 O 3 films in the visible range exceeded 83%, with a broad luminescence band exhibited at approximately 485 nm in the photoluminescence (PL) spectra.