Abstract
Calculations were made to obtain the equilibrium gas compositions in Si‐H‐Cl‐O and Si‐H‐F‐O systems containing trace amounts of oxygen. From the results, the boundary curves to define the regions for deposition or etching of silicon and silicon oxide were derived and the conditions for silicon epitaxy at low temperatures were proposed. Results of previous experiments demonstrating silicon epitaxy at low temperatures could be anticipated from the trends observed in this study.
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