Abstract
This research is a survey on characterization of partial oxides of silicon. In this study some coatings with X, whose values represents the ratio of oxygen to silicon, were deposited on an n type silicon wafer using the physical vapor deposition method. In morphology studies, first the structures of the created coatings were analyzed applying such techniques as SEM, FTIR, XPS, and AFM. The results showed that the increase of the parameter x could minimize the structural defects as well as increase the texture density. In addition, optical properties of the created coatings were investigated demonstrating that with an increase of the parameter X, the transmission properties diminished, while reflective characteristics improved.
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