Effect of oxygen concentration on resistive switching behavior in silicon oxynitride film**Project supported by the Natural Science Foundation of Zhejiang Province (No. LY17F040001), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. KF2015_02), the Open Project Program of National Laboratory for Infrared Physics, Chinese Academy of Sciences (No. M201503), the Zhejiang Provincial Science and

Abstract

SiON films with different oxygen concentrations were fabricated by reactive magnetron sputtering, and the resistive switching characteristics and conduction mechanism of Cu/SiON/ITO devices were investigated. The Cu/SiON/ITO device with SiON deposited in 0.8-sccm O flow shows a reliable resistive switching behavior, including good endurance and retention properties. As the conductivity of SiON increases with the increase of the oxygen content dynamical electron trapping and detrapping is suggested to be the conduction mechanism. The temperature dependent I–V measurement indicates that the carrier transport can be ascribed to the hopping conduction rather than the metallic conductive filament.