Abstract
The binding energy of oxygen and fluorine on the InSb(111) surface is investigated as a function of the termination of the latter using the projector augmented-wave method. It is shown that fluorine adsorption on the In-terminated surface leads, depending on the fluorine concentration, to the complete or partial elimination of the surface states induced by oxygen adsorption from the forbidden gap. The penetration of both adsorbates into the subsurface layers leads to the breaking of In–Sb bonds and the formation of chemical bonds of fluorine and oxygen with surface substrate atoms, which is the initial stage of the formation of a fluorine-containing anodic oxide layer. On the Sb-terminated InSb(111) surface, oxygen adsorption facilitates a decrease in the surface-state density in the forbidden gap. General trends in the variation in the electronic structure of the (111) surface upon fluorine and oxygen coadsorption in III–V semiconductors are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.