Abstract
The electrical transport taking place in the μc-Si tunnel recombination junction (TRJ) of a-Si:H/a-Si:H tandem solar cells and the role of CO 2 plasma oxidation performed between microcrystalline layers is investigated in this paper with the computer code AMPS. Oxidized interfaces were modelled as simple highly defective intrinsic μc-Si layers. Two different tunnel junction structures are studied in this paper: (a) (n)μc-Si/oxide/(p)μc-Si and (b) (n)μc-Si/(i)μc-Si/(p)μc-Si. In the last configuration the oxide interface is removed and replaced by a thin defective (i) μc-Si layer. Both tunnel junctions have comparable theoretical and experimental tandem solar cell efficiencies which indirectly proves that our modelling assumption for oxidised interfaces is correct. A-Si:H/a-Si:H tandem solar cell efficiencies depend on the thickness of the intrinsic layer introduced in the tunnel junction. The optimisation of this thickness provides a more controlled way of achieving greater efficiencies in a-Si:H/a-Si:H tandem solar cells.
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