Effect of oxide layer state on the photoelectric properties of thermally sensitized PbS thin films

Abstract

Lead sulfide (PbS) thin films were initially deposited through chemical bath deposition, followed by sensitization in a pure oxygen atmosphere at 600 °C. To investigate the influence of varying oxide layer states on the photoelectric properties of thermally sensitized PbS thin films, the surface oxide layer of the sensitized films was selectively removed using KOH etching. As the etching duration increased, a gradual decrease in surface oxygen content was observed, accompanied by an initial increase and subsequent decrease in detectivity. Notably, the optimum detectivity value (6.92 × 109 cm Hz1/2 W−1) was achieved after 10 s of KOH etching. Our investigation was further supplemented with field emission scanning electron microscopy and X-ray diffraction analyses to gain insights into the impact of the oxide layer state on the photoelectric properties of PbS thin films. Our findings led to the proposal of a dual conduction mechanism for carrier transport within PbS film. In the case of as-grown PbS films, carrier transport primarily occurs via crystal boundary transition. However, after oxygen sensitization, the formation of an oxygen-rich carrier channel at the crystal boundary shifts carrier transport dominance towards crystal boundary transport. The combined influence of both transmission mechanisms serves as a primary driver for the observed changes in the photoelectric properties of PbS films.