Abstract
Abstract Room temperature ferromagnetism (RTFM) is detected in the Co doped ZnO films, which are formed via the thermal oxidation of electrodeposited Co/Zn bilayers. The effect of oxidation temperature on the origin of RTFM is examined. Results indicate that various contents of Co 2+ dopants, Zn x Co 3−x O 4 clusters, O vacancy and Zn interstitial are achieved in the films oxidized at 400 and 550 °C. The amount of O vacancy decreases sharply with increasing oxidation temperature. This leads to the saturation magnetization of films oxidized at 400 °C is higher than that of films oxidized at 550 °C. This indicates that the effect of O vacancy on ferromagnetism is more prominent in the Co doped ZnO films.
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