Abstract
Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistors (pHEMTs) are currently used as active devices in manufacturing Monolithic Microwave Integrated Circuits (MMICs) for microwave and millimetre wave applications like Transmit-Receive (T/R) modules in Radars and communication. Low contact resistances (Rc) of pHEMT devices are necessary to obtain low access resistances to the device channel, for enhancement of transconductance and cut-off frequency. Devices formed by optimal and suboptimal conditions of rapid thermal alloying by infra-red optical radiation are investigated using cross-section transmission electron microscopy (XTEM), backside secondary ion mass spectrometry (backside SIMS) and thermal imaging techniques to understand the role of optimal alloy formation and its role in enhancement of device parameters.
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