Abstract
AbstractRF properties and avalanche noise generation in opto‐sensitive GaAs, InP, GaInAs, and GaInAsP double‐drift IMPATT diodes with and without optical injection have been studied. The optimum frequency and RF characteristics undergo sufficient variation with increase of intensity of optical radiation, which opens the prospects for RF tuning and its use as a low‐noise optical detector. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 33: 295–300, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10300
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