Abstract
We investigate the intrinsic performance limits of GaN HEMTs by incorporating the effect of polar optical phonon backscattering into a quasi-ballistic model. Then, we include parasitic elements and quantitatively investigate the degradation in performance. The method used is semi-analytical, and will prove very helpful in designing future generations of devices. The work not only sets a roadmap for scaling to high speeds, it also offers clear physical reasons for a number of unexplained features observed in state-of-the-art GaN HEMTs.
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