Abstract
We report on the effect of off-stoichiometry on the temperature dependence of electrical resistivity, the Seebeck coefficient, and the Hall coefficient in the Heusler-type ${\mathrm{Fe}}_{2}\mathrm{VAl}$ compound. While the stoichiometric ${\mathrm{Fe}}_{2}\mathrm{VAl}$ exhibits a semiconductorlike resistivity behavior, a small deviation of the Al content from stoichiometry causes a significant decrease in the low-temperature resistivity and a large enhancement in the Seebeck coefficient. Substantial enhancements for the Seebeck coefficient are in reasonable accord with changes in the Hall coefficient and can be explained on the basis of the electronic structure, where the Fermi level shifts slightly from the center of a pseudogap due to off stoichiometry.
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