Abstract
Plasma-induced damage of n-type GaN in Cl 2/CH 4/Ar reactants and its recovery by the O 2/CHF 3 plasma treatment in reactive ion etching (RIE) system were studied by etching rate, self-bias voltage and Hall measurement. RIE of n-type GaN was performed at a radio frequency power of 250 W in Cl 2/CH 4/Ar ambient prior to in the O 2/CHF 3 plasma treatment. The effect of O 2/CHF 3 plasma treatment on electrical characteristics of n-type GaN was investigated by changing the ratio of O 2/CHF 3 flow rate. It is found that the damage caused by conventional RIE processing could be partly recovered by CHF 3/O 2 plasma treatment.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
