Abstract

Boron arsenide (BAs) has recently attracted significant attention since the confirmation of its unusually high thermal conductivity (κ) above 1000 W m−1 K−1. However, determining how to grow BAs single crystals (SCs) on the centimeter scale remains unsolved, which strongly limits further research into, and potential applications of, this interesting material. Here, we report our technique to grow a 7-mm-long BAs SC via the chemical vapor transport method by applying heteronucleation sites. The different κ values obtained from BAs SCs grown on different heteronucleation sites show the importance of choosing the proper nucleation material. We believe these findings will inspire further research into the growth of this unique semiconductor.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.