Abstract
In the present paper, the effect of non-polar longitudinal optical phonons on domain wall resistance has been studied using the semiclassical approach. The analysis has been based on the Boltzmann transport equation, within the relaxation time approximation. We have determined the magnetoresistance of domain wall in nanowires based on diluted magnetic semiconductors. The modulation of the exchange and the impurity interactions by lattice vibrations, and the hole–phonon interaction are considered. The results indicate that the scattering role of phonons becomes significant by increasing temperature, which leads to the resistivity enhancement. It is also found that the magnetic impurities play an impressive role in enhancing the contribution of the domain wall in the resistance. In providing room temperature spintronics devices, understanding the effects of phonons and magnetic impurities on the domain wall resistance is crucial.
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