Abstract
The effect of cooling conditions in the plasma-assisted molecular-beam epitaxy growth on the structural and optical properties of InGaN nanostructures is studied. It is shown that cooling of the samples without nitrogen plasma contributes to the suppression of phase separation in InGaN nanostructures. The integrated intensity of photoluminescence from these nanostructures increased by a factor of 2. Keywords: InGaN, silicon, nanostructures, photoluminescence, structural properties, optical properties, molecular beam epitaxy, nitrogen plasma.
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