Abstract
In this study, we investigate the relationship between the nitrogen content and the optoelectronic properties in sputtered amorphous carbon nitride films (a-CN x). The incorporation of nitrogen and the resulting microstructure changes reveal that the evolution of the optical gap is attributed to the connectivity of the Csp 2 clusters and their global organisation. The increase in the N content induces the formation of C≡N terminating bonds affecting this connectivity, and therefore, the Csp 2 cluster size and their relative disorder.
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