Abstract
We investigated the microstructures and electrical properties of 8.4% nitrogen-doped GeBi(6at.%)Te and GeBi(6at.%)Te films that were thermally annealed in air atmosphere. Despite annealing in air, GeBi(6at.%)Te films showed only phase transition from cubic to rhombohedral phases. However, the Ge oxide, island shaped metallic Te, and Ge–Bi–Te phases were generated in 8.4% nitrogen-doped GeBi(6at.%)Te films.
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