Effect of nitrogen ion implantation in semi insulating 6H-SiC and recrystallization probed by Raman scattering

Abstract

The study is intended to investigate the low energy nitrogen ion implantation induced behavior and re-crystallization in semi-insulating 6H-SiC from surface to 5 µm, by Raman spectroscopy. The nature of defects accumulation related to the SiC bond breakages and re-crystallization on vacuum annealing were analyzed from the A1(LO) phonon mode and probed at successive depth from the surface. Variations on the asymmetrical A1(LO) peaks of as-implanted samples were made to order upon annealing, and the mode regained. The peak intensity variation of A1(LO) mode indicated the disorder accumulation. The identified damage depth was in good agreement with Stopping and Ranges of Ions in Matter (SRIM). The changes in Si-Si, deformed-Si-C, C-C vibrations and crystalline-SiC were used to explain the defect role in the implanted and annealed samples.