Abstract
A thin film of copper 60 nm thick was deposited on an alumina substrate. One piece of this film was subjected to bombardment of N + 2 ions of 40 keV energy at a dose of 5×10 16 ions cm −2 and the other piece of the same film was subjected to high power Q-switched laser pulses at a density of 2.4 J cm −2; in liquid nitrogen. The two samples were studied by XPS and SEM. It was observed that a drastic mixing in the neighbourhood of interface has taken place for the laser treated sample whereas in case of N + 2 bombardment the mixing at the interface was found to be less. It was observed that in the case of laser bombardment, there was preferential bond formation of copper with carbon deposited from inside the evaporation system. Further in the case of laser implantation, nitrogen did not penetrate beyond 30 nm and there exist two types of radiation induced segregations in both the cases giving rise to multiple peaks in the depth distribution of nitrogen.
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