Effect of nitrogen incorporation on the ordering transformation of CoPt in CoPt/TiN bilayer films

Abstract

The effect of nitrogen incorporation on the L10 ordering transformation of CoPt thin films deposited by dc magnetron sputtering on MgO substrate with/without TiN seed layers has been investigated. Without TiN seed layer, CoPt film is subjected to a tensile stress, and the perpendicular magnetic anisotropy (PMA) decreases with N2 gas flow ratio. This is due to the degradation of tensile stress, which is proven to be beneficial to the ordering transformation of L10 CoPt. On the contrary, when sputtered on TiN seed layer, CoPt film is subjected to a compressive stress and the PMA increases with N2 gas flow ratio. The increase of PMA is due to the increase in equilibrium vacancy concentration, which also promotes the diffusion of Co and Pt atoms during annealing. On quartz substrate, the maximum perpendicular coercivity of 11kOe was obtained at the CoPt/TiN bilayer films with 50% partial N2 gas flow ratio after post annealing at 700°C. By partially flowing nitrogen during the deposition, a 200°C reduction of ordering temperature was also obtained.