Abstract
The etching rate and the morphology of dislocation etch pits on {111} faces of synthetic diamond crystals with nitrogen impurity content varying from 1ppm to 600ppm were studied. Etch pits on nitrogen-containing diamond crystals are found to be of triangular shape; their lateral walls are formed by planar faces. Etch pits on nitrogen-gettered diamonds have a shape of a convex triangle and the profile varying from the maximum inclination angle in the pit center to zero at a large distance from it. The rate of diamond etching (oxidation) rises as the content of nitrogen impurity in diamond crystals increases from 1ppm to 200ppm and subsequently decreases twice at nitrogen concentration of 600ppm. These regularities of etching agree well with the existing models of crystal dissolution in the presence of impurities. It is assumed that nitrogen atoms incorporated in the diamond lattice can be regarded on the crystal surface as atoms of a stable inhibiting impurity, which change the rate and character of etching of diamond crystals.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
