Abstract
Effect of Nitrogen Implantation on the Performance of TOHOS Total Ionizing Dose Radiation Sensor Device
Highlights
The total ionizing dose (TID) radiation effect is a major application concern for the operation of electronic devices in advanced X-ray lithography semiconductor manufacturing processes and outer space applications, as well as in other harsh environments such as accelerators, where highand low-energy particles exist
The negative VT shift result agrees with those of previous studies.[5,6] The radiation-induced negative VT shift in the irradiated N5TOHOS device is induced by a combination of storage charge loss in the HfO2 trapping layer and a build-up of positive charges from the asymmetric trapping of electrons and holes in the trapping layer.[5,6] As the N5-TOHOS device was irradiated by ionization radiation, the electron–hole pairs are generated throughout the gate insulation layer, and fractions of free electrons and holes escaped from the initial recombination process
It shows a quasi-linear correlation of |delta VT| vs gamma radiation TID below 100 krad in log scale, but |delta VT| increases more sharply after gamma irradiation at levels up to 100 krad TID.[5,6] This result is in agreement with those of previous studies.[5,6]
Summary
The total ionizing dose (TID) radiation effect is a major application concern for the operation of electronic devices in advanced X-ray lithography semiconductor manufacturing processes and outer space applications, as well as in other harsh environments such as accelerators, where highand low-energy particles exist. The SOHOS device has very poor data retention characteristic.[8,9,10] The radiation-induced charging effect of a few hafnium-based MOS devices have been reported.[6,7] the data retention reliability of the hafnium-based SONOS-like device after gamma irradiation has not been well studied and it will be the main focus of this study. To improve the charge retention reliability of the hafnium-based SONOS-like device after gamma irradiation, a nitrogen-implanted titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon (hereafter, N-TOHOS) device is fabricated. The electrical performances of N-TOHOS devices with various implantation doses and energies after gamma irradiation, including charge storage density, gate leakage current, VT stability, and retention time, are the main subjects of this study
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
