Abstract

The effect of nitrogen partial pressure (pN2) on structural, composition, deposition rate and mechanical properties of Zirconium Tungsten Nitride (ZrxW1−xNy) thin films have been studied. ZrxW1−xNy thin films have been deposited on silicon (100) substrates by DC/RF reactive magnetron sputtering. Structure and elemental composition of the deposited ZrxW1−xNy thin films strongly depend on pN2. XRD analysis shows that for 0.07Pa≤pN2≤0.17Pa, ZrxW1−xNy films exhibit single (fcc) phase, for 0.20Pa≤pN2≤0.27Pa, an amorphous phase is obtained and for 0.33Pa≤pN2≤0.67Pa reflections corresponding to dual (fcc+hcp) phase have been observed. The phase formation has been confirmed by TEM diffraction patterns. The root mean square roughness of the films varies non-monotonically with increasing pN2. The thickness of the films decreases continuously with increasing pN2. Results of nano-indentation analysis confirm moderate hardness, high wear resistance, high resistance to fatigue fracture and high adhesiveness of ZrxW1−xNy films. Among all the phases, maximum hardness (~24GPa) and maximum reduced elastic modulus (135GPa) have been obtained for dual phase (fcc+hcp) film while resistance to fatigue fracture (H3/Er2~0.87GPa), wear resistance (H/Er~0.2) and ductility for single phase (fcc) film were found to be maximum. No crack was observed to propagate in the films at a high load of 50mN. All the films were found to exhibit high adhesion with the substrate surface.

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