Abstract
An inverter using only n-type amorphous Si–In–Zn–O (a-SIZO) as a channel material has been fabricated and the change of the characteristics, like Vth has been investigated depending on nitrogen doping into a-SIZO. When nitrogen is doped, oxygen vacancy was suppressed in a-SIZO system, so carrier concentration and the characteristic have been changed in a-SIZO. Inverter was fabricated with nitrogen doping and undoped a-SIZO. Inverter behavior has been extracted by VTC graph by applying VDD from 1 to 5 V. It is confirmed with simply nitrogen doped SIZO inverter that a voltage gain of 2.37 was successfully obtained when the VDD was 5 V.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Transactions on Electrical and Electronic Materials
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
