Abstract
AbstractInvestigations of photoelectrical properties of ZnO films are important scientific task for designing UV detectors for various applications. We report the positive role of nitrogen doping in increasing photoresponsivity of ZnO:N‐based detectors. It is suggested that nitrogen slightly deteriorates the structural quality of ZnO films and compensates intrinsic defects that increase photoresponsivity. Also, the spectral response of Ni/ZnO:N/n+‐Si structures at different biases were considered.magnified image
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