Abstract
The TiO2 and Nitrogen doped TiO2 thin films were effectively synthesized on glass substrate for different Nitrogen doping concentration (4, 6, 8, 10 at.%) by Jet nebulizer spray technique. The XRD patterns revealed that the films were in anatase phase with the tetragonal structure. On observing SEM images, the occurrences of apparent agglomeration pattern were found in 8 at.% N-TiO2 thin film. The presence of elements was confirmed from EDX analysis. A considerable reduction in band gap was attained on increasing nitrogen concentration using UV–Visible spectroscopy. By analyzing the PL spectra, it is found that nitrogen incorporation on TiO2 lattice reduces the band to band recombination in the surface state emission. N-TiO2 thin film shows high persistent photoconductivity with slow decay.
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