Abstract
Electroless copper deposition on TaN, (x = 0-1) barrier films was investigated in terms of nitrogen flow rates. Field-emission scanning electron microscopy micrographs of the electroless copper deposition on TaN x barrierand palladium-activated TaN x barrier films showed that the density of the copper aggregates and of palladium nuclei increased with increasing nitrogen flow rate. As a result, the more uniform and excellent electroless copper deposition was acquired as the nitrogen flow rate increases. Plan-view transmission electron microscopy micrographs of palladium activated TaN x for 5 s showed that palladium nuclei formed on grain boundaries, especially on grain edges of TaN x barrier films in the initial stage of palladium activation.
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