Abstract
We have investigated effect of nitrogen bonding states on dipole at the HfSiO/SiON interface using photoemission spectroscopy with synchrotron radiation. Significant increase in the valence-band discontinuity between HfSiO films on a Si substrate upon annealing is observed, which can be related to changes in the interface dipole. Chemical states and in-depth profiles analyses suggest diffusion of nitrogen atoms from the HfSiO/SiON interface to the substrate during annealing processes. It is found that the formation of the interface dipole strongly depends on the nitrogen bonding states and their distributions at the HfSiO/SiON interface.
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