Abstract
(Al0.1Ga0.9)2O3 films were deposited on 4H-SiC substrates by radio-frequency magnetron sputtering. The surface morphologies of the aluminum gallium oxide (AGO) films were analyzed by X-ray diffraction, atomic force microscopy, field-emission scanning electron microscopy, energy-dispersive spectroscopy, and time-of-flight secondary-ion mass spectrometry. It was confirmed that the crystallinity and grain size of the AGO films were affected by the atmosphere during the annealing process. Non-annealed thin films were mainly amorphous in nature, with only weak signs of crystallinity, whereas the annealed thin film samples displayed a more pronounced crystallinity. The nitrogen-annealed samples tended to have a smaller mean grain size than the oxygen-annealed samples. The oxygen-annealed samples had a large stoichiometric ratio of oxygen atoms in the thin films. This could be caused by the absorption of oxygen into the oxygen vacancies. The measured Hall carrier mobilities were 15.98 cm2/V•s in the nitrogen-annealed sample and 12.54 cm2/V•s in the oxygen-annealed one.
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