Abstract
In this work the effect of nitridation on the reliability of thick (60 nm) gate oxides used in discrete power MOSFETs is investigated. Nitridation was carried out by post-oxidation anneal in N 2O at 1000 °C. Secondary ion mass spectroscopy characterization did show that the nitrogen resulting from N 2O nitridation piles up in the oxide at the Si–SiO 2 interface regardless of nitridation time. The results obtained show improved breakdown field ( E bd), and charge-to-breakdown ( Q bd) characteristics for nitrided thick oxides. Also, lower mid-bandgap interface trap density ( D it) was observed in the case of nitrided oxides. Key conclusion from this experiment is that nitridation of thick (>50 nm) gate oxide performed to suppress boron penetration into the MOSFET channel region is not having an adverse effect on its electrical characteristics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
