Abstract
GaN films are grown on [0 0 1] GaAs substrates by plasma-assisted molecular beam epitaxy using a three-step process that consists of a substrate nitridation, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. Films are evaluated by X-ray diffraction and the dependence of crystalline quality on the nitridation temperature is studied. It is demonstrated that nitridation has to be performed at low-temperature to achieve c-oriented α-GaN. Higher nitridation temperature promotes formation of mis-oriented domains and β-GaN inclusions
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