Abstract
The effect of Nb5+ on the crystallographic structure, electrical properties and the dielectric behaviour of Na0.5La0.5Cu3Ti(4−x)NbxO12 ceramics prepared via the solid-state reaction method were investigated. Rietveld refinement of the powder diffraction data confirmed a cubic, single phase structure with space group Im3. A low frequency Debye-type relaxation is observed for the Nb-doped samples in addition to the usually observed high frequency relaxation. The grain boundary resistance decreased significantly with increasing Nb5+ dopant. The reduced grain boundary resistivity was found to be responsible for the decrease in the potential barrier at the grain boundary as observed from the overall variation of current density-electric field (J–E) characteristics. The dielectric constant at low Frequency is increased with increasing Nb content. The dielectric behaviour of the compound is explained on the basis of the Internal Barrier Layer Capacitance (IBLC) model.
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