Abstract
Effect of Ni thickness on NiSi fully silicided (FUSI) metal gate material and device characteristics were investigated using X-ray diffraction, cross-sectional transmission electron microscopy, sheet resistance, and device capacitance-voltage (C-V) and current-voltage measurements. 450, 600, and 750 A Ni thicknesses were employed for full silicidation study of 800 A poly-Si gate on SiO 2 . The theoretically calculated Ni thickness (450 A) for full silicidation of 800 A poly-Si is insufficient, resulting in partial silicidation at the gate/SiO 2 interface. Excess Ni thickness (750 A) forms Ni-rich Ni 2 Si FUSI with higher sheet resistance than NiSi. It is also shown that the amount of flatband voltage shift (ΔV F B ) in C-V and hence the metal gate work function remains constant once the total silicidation is achieved. No degradations to the FUSI/SiO 2 interface as well as the electrical properties of gate dielectrics are observed with excess Ni.
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