Abstract
The effect of neutron irradiation on power metaloxide-semiconductor field effect transistor (power MOSFET) breakdown voltage has been investigated. Transistors with various breakdown voltage ratings were irradiated in a TRIGA nuclear reactor with cumulative fluence levels up to 5/spl times/10/sup 14/ neutrons/cm/sup 2/ (1 MeV equivalent). Noticeable increases in the breakdown voltages are observed in n-type MOSFET's after 10/sup 12/ neutrons/cm/sup 2/ and in p-type MOSFETs after 10/sup 12/ neutrons/cm/sup 2/. An increase in breakdown voltage of as much as 30% is observed after 5/spl times/10/sup 14/ neutrons/cm/sup 2/. The increase in breakdown voltage is attributed to the neutron-irradiation-induced defects which decrease the mean free path and trap majority carriers in the space charge region. The effect of positive trapped oxide charge due to concomitant gamma radiation and the effect of the termination structure on the increase in breakdown voltage are considered. An empirical model is presented to predict the value of the breakdown voltage as a function of neutron fluence. >
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.