Abstract
The effect of neutron irradiation on commercial vertical high voltage normally-OFF SiC power N-JFETs was investigated. JFETs were irradiated with 1 MeV neutron equivalent fluences up to 4×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> . Measurement showed that fast neutrons introduce deep levels acting mostly as deep acceptor centers. These centers gradually compensate lightly doped channel and drift regions of JFETs. As a result, characteristics are deteriorated, the JFET threshold voltage gradually increases and transconductance is lowered. At fluences higher than 4×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> , the low doped n-regions are fully compensated and transistor loses its functionality. The 2D physical model of JFET in ATLAS simulator was developed and calibrated including the neutron irradiation effects. Simulation showed a good agreement with experimental data. This confirmed that carrier removal in the channel and drift region by acceptors centers introduced by neutrons is a dominant reason of SiC JFET degradation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
