Abstract
During the plasma sputtering process, the effects of the negative oxygen ions (NOIs) on the thin film properties of amorphous indium-gallium-zinc oxide (a-IGZO) has been investigated. While the energies of NOIs effectively controlling by using a superimposed rf/dc magnetron sputtering system, the energies of NOIs extracted by in situ analyses with ion energy analyzer are good agreement with the calculated values by the Kevin Meyer equation. Furthermore, we find that the observed energies of NOIs are enough high to cause a lattice distortion and/or displacement in a-IGZO thin films. Our work demonstrates the bombardment of NOIs is one of a crucial issue to achieve the high quality a-IGZO films.
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