Abstract
Electrical and photoresponse properties of a Al/porous silicon/crystalline silicon/Al structure (Al/PSi/Si/Al) are investigated under irradiation of Nd:YAG laser pulses. The effect of Nd-YAG laser irradiation on the morphological and structural properties of a porous silicon layer is also demonstrated. The porous Si layer is synthesized on a single crystalline p-type Si using electrochemical etching in aqueous hydrofluoric acid at a current density of 20 mA/cm2 for a 40-min etching time. The structure of the porous layer is investigated using atomic force microscopy and optical microscopy. The electrical properties and photodetector figures of merit (responsivity, detectivity, and carrier lifetime) are found to be dependent on the laser fluence.
Highlights
Porous silicon has drawn attention due its superior properties, required by many applications, as compared to crystalline
We demonstrate the effect of pulsed Nd-Yag laser irradiation on the performance of a Al/Porous silicon (PSi)/ Si/Al photodetector fabricated by electrochemical etching
The atomic force microscopy (AFM) investigation showed some variation in morphology of the porous silicon layer before and after laser irradiation
Summary
Porous silicon has drawn attention due its superior properties, required by many applications, as compared to crystalline. Porous silicon was discovered by Uhlir [1] in 1956 when performing an electrochemical etching of silicon [2] It is defined as a composition of a silicon skeleton permeated by a network of pores. In 1990, the strong visible photoluminescence (PL) [4] and electroluminescence [5] from PSi at room temperature have opened new possibilities for Si-based optoelectronic applications [6] Fabrication and characterization of porous silicon photodetectors by electrochemical etching were reported [7]. Few studies reported on the effect of laser irradiation on the PL and structural properties of porous silicon [8,9]. It was reported that the PL properties of porous silicon are dependent on irradiating laser energy density, a result that opened the door for using it in optical recording and storage information on the surface of silicon [10]. The dependence of the morphological and structural properties of the porous silicon layer on laser fluence is presented
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
